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      d1 d1 d2 d2 g1 s2 g2 s1 top view 8 1 2 3 4 5 6 7 p-channel mosfet n-channel mosfet www.irf.com 1  advanced process technology  ultra low on-resistance  dual n and p channel mosfet  surface mount  available in tape & reel  150c operating temperature  lead-free these hexfet ? power mosfet's in a dual so-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. additional features of these hexfet power mosfet's are a 150c junction operating temperature, fast switching speed and improved repetitive avalanche rating. these benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. the efficient so-8 package provides enhanced thermal characteristics and dual mosfet die capability making it ideal in a variety of power applications. this dual, surface mount so-8 can dramatically reduce board space and is also available in tape & reel.  
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 #$ *  (  +,-   %&   0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)

 8 www.irf.com   p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - -    2    ? "0," ) " :3 2  ?  ) " :3 3 () cc ? b  0) b"  
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 www.irf.com 9   so-8 package outline dimensions are shown in millimeters (inches) so-8 part marking e1 d e y b a a1 h k l .189 .1497 0 .013 .050 bas ic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 basic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 min max mil l i me t e r s inches min max dim 8 e c .0075 .0098 0.19 0.25 .025 bas ic 0.635 bas ic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c ab e1 a a1 8x b c 0.10 [.004] 4 3 12 footprint 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. ou t l i ne conf or ms t o j e de c ou t l i ne ms -0 12aa. not es : 1. dimens ioning & t olerancing per as me y14.5m-1994. 2. cont rolling dimens ion: millimet er 3. dimensions are shown in millimeters [inches]. 5 dimens ion does not include mold prot rus ions . 6 dimens ion does not include mold prot rus ions . mold prot rus ions not t o exceed 0.25 [.010]. 7 dimension is the length of lead for soldering to a s ubs t rat e. mold prot rus ions not t o exceed 0.15 [.006]. 8x 1.78 [.070] dat e code (yww) xxxx international rectifier logo f7101 y = l as t digit of t he ye ar part number lot code ww = we e k example: this is an irf7101 (mosfet) p = designates lead-free product (opt ional) a = assembly site code    
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 10 www.irf.com   330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel dimensions are shown in millimeters (inches)                     !

 www.irf.com 11    qualification standards can be found at international rectifier?s web site http://www.irf.com/product-info/reliability   applicable version of jedec standard at the time of product release. msl1 (per jedec j-std-020d ?? ) rohs compliant qualification information ? qualification level industrial ? (per jedec jesd47f ?? guidelines) yes moisture sensitivity level so-8 ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ date comments 5/8/2014 ? added ordering information to reflect the end-of-life revision history


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